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Dr. Koyel Bhattacharya

Dr. Koyel Bhattacharya is an Assistant Professor in the Department of Physics.

Previous position: Assistant Professor, 21/03/2007- 31/03/2015  Mathabhanga College, Mathabhanga, Coochbehar.

Contact Details

  • Email ID: koyel.21stapril@gmail.com 
  • Mob: +91 9475 086471

Qualifications

  • M.Sc
  • Ph.D.(Science)

Teaching areas

  • General Properties of Matter, Thermal Physics, Modern Physics (Quantum Mechanics, Solid State Physics, Atomic Physics etc

Research Interest

  • Preparation and Characterizations of Nano-crystalline Silicon materials mainly for efficient photovoltaic uses, Electrical Properties of Glass-nanocomposites.

List of Publications

  • “Structural studies on the microcrystallization of Si:H network developed by hot- wire CVD”; Koyel Bhattacharya and Debajyoti Das, Solar Energy Mater. And Solar Cells, 90 (2006) 849. (Journal Type- International, DOI: 10.1016/ j.solmat. 2005.05.004)

  • .“Characterization of the Si:H network during transformation from amorphous to  micro- and nanocrystalline structures”; Debajyoti Das and Koyel Bhattacharya, J. Appl. Phys. 100 (2006) 103701. (Journal Type- International, DOI: 10.1063/ 1.2384812)
  • . “Nanocrystalline silicon films prepared from silane plasma in RF-PECVD, using helium dilution without hydrogen: structural and optical characterization”; Koyel Bhattacharya and Debajyoti Das, Nanotechnology, 18 (2007) 415704. (Journal Type- International, DOI: 10.1088/0957-4484/18/41/415704)

  • “Superior Nanocrystalline Silicon Network at Enhanced Growth Rate”; Debajyot Das and Koyel Bhattacharya, Jpn. J. Appl. Phys. 46, No. 42 (2007) L1006. (Journal Type- International, DOI: 10.1143/ JJAP.46.L1006)

  • . “Nanocrystalline silicon prepared at high growth rate using helium dilution”; Koyel Bhattacharya and Debajyoti Das, Bull. Mater.Sci. 31, No. 3 (2008) 1. (Journal Type- International, DOI: 10.1007/S/2034-008-0073-6)

  • . “Effect of deposition temperature on the growth of nanocrystalline silicon network from helium diluted silane plasma”; Koyel Bhattacharya and Debajyoti Das,  J.  Phys. D: Appl. Phys. 41 (2008) 155420. (Journal Type- International, DOI: 10.1088/0022-3727/41/15/155420)

  • . “Evolution of nc-Si Network and the Control of Its Growth by He/H2 Plasma Assistance in SiH4 at PECVD”; Debajyoti Das, DebnathRaha and Koyel Bhattacharya, Journal of Nanoscience and Nanotechnology, 9 (2009) 5614. (Journal Type- International, DOI: 10.1166/ jnn. 2009.1151)

  • .“Electrical relaxation and grain boundary effect in CdI2 doped glass-nanocomposites”, Arun Kr. Bar, Koyel Bhattacharya, RanadipKundu, Debasish Roy and Sanjib Bhattacharya Journal of Non-Crystalline Solids 452 (2016) 169 (Journal Type- International, DOI: 10.1016/j.jnoncrysol.2016.08.040)

  • “Anomalous electrical conductivity in selenite glassy nanocomposites” Arun Kr Bar, Koyel Bhattacharya, RanadipKundu, Debasish Roy and Sanjib Bhattacharya Materials Chemistry and Physics  199 (2017) 322(Journal Type- International, DOI: 10.1016/j.matchemphys.2017.07.004)

     

     

     

 

Reffered Publications in Conference

  • Nanocrystalline Silicon network grown at low H2-dilution and low substrate temperature” Koyel Bhattacharyaand Debajyoti Das “17th AGM of the Material Research Society of India (MRSI)” (13th -15th February,2006) organized by University of Lucknow, Lucknow and MRSI-Lucknow Chapter.

  • “Characterization of Nanocrystalline Silicon network prepared using H2-dilution”Koyel Bhattacharya and Debajyoti Das, “Proceedings of the National Symposium on Spectroscopy and its Applications” (18th - 20th January, 2006) held on Indian Association for the Cultivation of ScienceJadavpur, Kolkata-700032.

Book/Thesis/Synopsys etc. Pubilcated

  • Thesis Title: “Preparation and Characterization of Micro/Nano-crystalline Silicon Films Separately from Hydrogen and Helium diluted Silane Plasma in Chemical Vapour Deposition

Seminars / Conferences Attended

  • National: 4 (Paper presented in 2, Related topic: -“Nanocrystalline Silicon network grown at low H2-dilution and low substrate temperature”) International
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